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resistive switching memory based on magnesium difluoride

Based on

1 Articles
2016 Most recent source

Composition

1

SiO2/Si

Type Nano Material
Formula
Role substrate
2

magnesium

Type Single Compound
Formula Mg
Role blanket layer
3

magnesium film

Mg film
Type Nano Material
Formula
Role anode
4

magnesium fluoride film

MgF2 film
Type Nano Material
Formula
Role switch
5

iron

Type Single Compound
Formula Fe
Role cathode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on switch cycle

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

resistive switching memory based on magnesium difluoride

Size: not specified

Medium/Support: none

References

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