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graphene/hexagonal boron nitride-based interlayer tunnel field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily n-doped silicon

n+-Si
Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

bilayer graphene flakes

bilayer graphene BLG flakes
Type Nano Material
Formula
Role electrodes
5

bilayer hexagonal boron nitride sheets

hexagonal boron nitride nanosheets hexagonal boron nitride nanoflakes hexagonal boron nitride bilayer hexagonal boron nitride bilayer h-BN sheets h-BN nanosheets h-BN nanoflakes hBN nanosheets h-BN bilayer bilayer hBN hBN bilayer h-BN hBN
Type Nano Material
Formula
Role interface layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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References

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