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6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
4

12-cyclohexyldodecylphosphonic acid

CDPA
Type
Formula C18H37O3P
Role
5

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene ribbons

TIPS-TAP ribbons
Type Nano Material
Formula
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene
  • 12-cyclohexyldodecylphosphonic acid-modified AlOx/SiO2/highly doped silicon
  1. lkslNrAPP3EUFiKd1qxx9fUmkmcIvslt
Product

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene
  • 12-cyclohexyldodecylphosphonic acid-modified AlOx/SiO2/highly doped silicon
  1. 4XexG
Product

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene
  • 12-cyclohexyldodecylphosphonic acid-modified AlOx/SiO2/highly doped silicon
  1. nvQdg
Product

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene
  • 12-cyclohexyldodecylphosphonic acid-modified AlOx/SiO2/highly doped silicon
  1. ea0TS
Product

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene
  • 12-cyclohexyldodecylphosphonic acid-modified AlOx/SiO2/highly doped silicon
  1. e2Hcb
Product

6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene-based organic thin film transistor

Size: not specified

Medium/Support: none

References

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