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few-layer ReS2 phototransistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
4

few-layer rhenium disulfide nanosheets

few-layer ReS2 nanosheets
Type Nano Material
Formula
Role channels
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent dependent on drain voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
  • hexagonal boron nitride
Product

few-layer ReS2 phototransistor

Size: not specified

Medium/Support: none

References

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