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Al0.33Ga0.67As/GaAs-based 2D electron system

Based on

1 Articles
2014 Most recent source

Composition

1

silicon-δ-doped aluminum gallium arsenide film

Si-δ-doped Al0.33Ga0.67As film
Type
Formula
Role
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role buffer layer
3

gallium arsenide

Type
Formula GaAs
Role
4

silicon-doped gallium arsenide

Si-doped GaAs
Type
Formula
Role
5

n+-doped gallium arsenide

n+-doped GaAs
Type Complex Compound
Formula
Role transition layer
6

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type
Formula Al0.33Ga0.67As
Role
7

gallium manganese arsenide

(Ga,Mn)As
Type
Formula
Role
8

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel's mean free path

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium aluminium arsenide
  • gallium manganese arsenide
  • gallium arsenide
See all (6)
Product

Al0.33Ga0.67As/GaAs-based 2D electron system

Size: not specified

Medium/Support: none

References

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