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dual-side gated a-IGZO thin film transistor on polyamide substrate

Based on

1 Articles
2016 Most recent source

Composition

1

polyamide

Type Polymer
Formula
Role substrate
2

Ti/Au/Ti film

Type Nano Material
Formula
Role back gate
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

amorphous indium gallium zinc oxide

a-IGZO
Type Complex Compound
Formula
Role channels
5

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role source
6

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role drain
7

1-hexyl-3-methylimidazolium bis((trifluoromethyl)sulfonyl)imide

1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [C6mim][NTf2] [Hmim][TFSI] [HMIM]Ntf2 HMIM-TFSI HMITFSI
Type Single Compound
Formula C12H19F6N3O4S2
Role IL gate dielectric
8

Ti/Au film

Ti/Au
Type Nano Material
Formula
Role side IL gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • titanium
  • polyamide
Product

dual-side gated a-IGZO thin film transistor on polyamide substrate

Size: not specified

Medium/Support: none

References

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