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semiconductor device

Based on

1 Patents
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

InAs quantum dots

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence intensity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • low temperature gallium arsenide
  • trimethanidogallium
Product

semiconductor device

Size: not specified

Medium/Support: none

References

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