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p-type pentacene/underside-doped graphene-based organic vertical field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

bis(trifluoromethanesulfonyl) imide

bis(trifluoromethanesulfonyl)imide bis(trifluoromethanesulfonyl)amide bis(trifluoromethanesulfonyl)amine bis(trifluoromethane) sulfonamide bis(trifluoromethane)sulfonimide bis(trifluoromethane)sulfonamide HNTf2 TFSI TFSA
Type Single Compound
Formula C2HF6NO4S2
Role doped layer
6

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
7

pentacene

PEN Pen P5 Pc Pe
Type Single Compound
Formula C22H14
Role semiconductor layer
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. lL97C0A
  2. VcHrT39knSIq6Atrf2IoVg0A6tOX
Product

p-type pentacene/underside-doped graphene-based organic vertical field-effect transistor

Size: not specified

Medium/Support: none

References

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