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hexagonal boron nitride-capped black phosphorus field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer black phosphorus flake

few-layer BP flake BP flake
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role capping layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. BFvDzEfyLsaKV
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. ihPajAUAQWyH1
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. 9sZovkRobI33W
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. fizXnWAXQwfXQ
Product

hexagonal boron nitride-capped black phosphorus field-effect transistor

Size: not specified

Medium/Support: none

References

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