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amorphous metal oxide thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n++-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium-gallium-tin-oxide film

IGZO thin film IGZO film
Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on IGZO synthesis fuel composition and weight

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc nitrate
  • indium(III) nitrate
  • Si/SiO2
See all (5)
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  4. TsksRY816Hh8kGlRmZkufEF3qYwdY7VxHlo7JTiaZNNoB25Rp6D3wtRcUCsSWdKnTWRSkm2LljfF3zFDG
Product

amorphous metal oxide thin-film transistor

Size: not specified

Medium/Support: none

References

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