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trilayer MoS2 channel-based electric double layer quasi-CMOS inverter

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

MoS2 trilayer film

Type Nano Material
Formula
Role semiconducting channel
3

nickel

Type Single Compound
Formula Ni
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly(styrene-block-methyl methacrylate-block-styrene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide/ethyl propionate gel

PS-PMMA-PS/[EMIM][TFSI]/ethyl propionate gel
Type Complex Compound
Formula
Role gate electrolyte
7

platinum

Type Single Compound
Formula Pt
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • sapphire
Product

trilayer MoS2 channel-based electric double layer quasi-CMOS inverter

Size: not specified

Medium/Support: none

References

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