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n-type PTCDI-C8/underside-doped graphene-based organic vertical field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

poly(iminoethylene)

polyethyleneimine polyaziridine PEI
Type Polymer
Formula
Role doped layer
6

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
7

N,N'-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide

N,N'-dioctyl-3,4,9,10-perylenetetracarboxylic diimide N,N'-dioctyl-3,4:9,10-perylene tetracarboxylicdiimide N,N'-dioctyl-3,4,9,10-perylenedicarboximide N,N'-dioctyl perylene diimide PTCDI-C8 PTCDI-C8 PDI-C8 PDI-C8 PDI
Type Single Compound
Formula C40H42N2O4
Role semiconductor layer
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. unr5Tbx
  2. BZXF2C2Dn08YgF245QooXA5GaO8o
Product

n-type PTCDI-C8/underside-doped graphene-based organic vertical field-effect transistor

Size: not specified

Medium/Support: none

References

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