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underside-doped graphene field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bis(trifluoromethanesulfonyl) imide

bis(trifluoromethanesulfonyl)imide bis(trifluoromethanesulfonyl)amide bis(trifluoromethanesulfonyl)amine bis(trifluoromethane) sulfonamide bis(trifluoromethane)sulfonamide HNTf2 TFSI TFSA
Type Single Compound
Formula C2HF6NO4S2
Role doped layer
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role conducting channel
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Dirac voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. lfSM0Mk
  2. QmVTY7zkqd6arJ1jOURFsO112dEl
Product

underside-doped graphene field-effect transistor

Size: not specified

Medium/Support: none

References

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