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field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly doped p-type silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role conducting layer
4

titanium

Type Single Compound
Formula Ti
Role source
5

titanium

Type Single Compound
Formula Ti
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
device resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica on highly p-type doped silicon
  • molybdenum(IV) sulfide
Product

field-effect transistor

Size: not specified

Medium/Support: none

References

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