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monolayer WSe2 channel-based electric double layer quasi-CMOS inverter

Based on

1 Articles
2016 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role substrate
2

WSe2 monolayer film

Type Nano Material
Formula
Role semiconducting channel
3

nickel

Type Single Compound
Formula Ni
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role electrodes
5

poly(styrene-block-methyl methacrylate-block-styrene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide/ethyl propionate gel

PS-PMMA-PS/[EMIM][TFSI]/ethyl propionate gel
Type Complex Compound
Formula
Role gate electrolyte
6

platinum

Type Single Compound
Formula Pt
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on transistors

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. HssO
Product

monolayer WSe2 channel-based electric double layer quasi-CMOS inverter

Size: not specified

Medium/Support: none

References

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