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AlGaN-based ultraviolet light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

Si-doped n-type GaN

Type
Formula
Role
4

indium aluminium gallium nitride/indium gallium nitride multiple quantum well

In0.03Al0.16Ga0.81N/In0.3Ga0.7N MQW
Type
Formula
Role
5

p-aluminium gallium nitride

Type
Formula
Role
6

Mg-doped p-type GaN

Type
Formula
Role
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role UV-transparent conductive electrodes (TCE)
8

nickel

Type Single Compound
Formula Ni
Role top contact

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. DWZbVI48yOKbKhc0b2ubk0ItJ1SJ0kp
Product

AlGaN-based ultraviolet light-emitting diode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. mcC4k9efZbitl1AidZyyJNG4ZdtrUXy
Product

AlGaN-based ultraviolet light-emitting diode

Size: not specified

Medium/Support: none

References

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