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vertical organic field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
3

1,1,1,3,3,3-hexamethyldisilazane

bis(trimethylsilyl)amine hexamethyl disilazane trimethylsilyl moiety hexamethyldisilazane hexamethyldisilane HDMS HMDS
Type
Formula C6H19NSi2
Role
4

pentacene

PEN Pen P5 Pc Pe
Type
Formula C22H14
Role
5

gold

Type Single Compound
Formula Au
Role source
6

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulating layer
7

pentacene

PEN Pen P5 Pc Pe
Type
Formula C22H14
Role
8

fluorinated fullerene

C60F36 fullerene
Type
Formula
Role
9

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. HOpuG7N46ey
Product

vertical organic field-effect transistor

Size: not specified

Medium/Support: none

References

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