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cellulose ionogel-gated zinc oxide thin film field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p++-silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

hexamethyldisilazane-treated ZnO film

HMDS-treated ZnO film
Type Nano Material
Formula
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
6

1-ethyl-3-methylimidazolium 2-methoxy-2-oxoethyl methylphosphonate/1-ethyl-3-methylimidazolium tetrafluoroborate cellulose ionogel

[EMIM][MeAc(Me)PO3]/[EMIM][TFSI] cellulose ionogel
Type Complex Compound
Formula
Role gate electrolyte
7

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on air storage time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc acetate
  • SiO2/p++-silicon
  1. YtW34JROLCx7w4y9ntH
  2. uaryoH
  3. d2L
Product

cellulose ionogel-gated zinc oxide thin film field-effect transistor

Size: not specified

Medium/Support: none

References

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