Loading ...

cellulose ionogel-gated zinc oxide thin film field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p++-silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

zinc oxide

Type Single Compound
Formula ZnO
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
6

1-ethyl-3-methylimidazolium 2-(2-methoxyethoxy)ethyl methylphosphonate cellulose ionogel

[EMIM][Me(EG)2(Me)PO3] cellulose ionogel
Type Complex Compound
Formula
Role gate electrolyte
7

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc acetate
  • SiO2/p++-silicon
  1. 3aZPcMIs6TyNDzySwN6
  2. kELGaC
  3. gEL
Product

cellulose ionogel-gated zinc oxide thin film field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial