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silicon-nanowire field-effect transistor device array

Based on

13 Articles
2 Patents
2016 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon doped GaN nanowires

Type
Formula
Role
3

indium gallium nitride quantum dots

InGaN quantum well InGaN quantum dots quantum dots InGaN QD QD
Type
Formula
Role
4

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
5

Mg doped GaN

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
calibrated conductance response

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Catalytic properties

Reaction Value Nanomaterial Variant Source
enzymatic oxidation of glucose

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Preparation

Method 1

Type: Physical formation
Source:
  1. WvMYWNtA69g1uRtyCLs
  2. 4PPKcq
Product

silicon-nanowire field-effect transistor device array

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon
  • indium-gallium alloy
  1. RTsgkKy
Product

silicon-nanowire field-effect transistor device array

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

silicon-nanowire field-effect transistor device array

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

silicon-nanowire field-effect transistor device array

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
Product

silicon-nanowire field-effect transistor device array

Size: not specified

Medium/Support: none

References

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