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transistor memory device

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

SWNT film

Type Nano Material
Formula
Role channels
4

PVDF-TrFE/water

Type Complex Compound
Formula
Role passivation layer
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on high/low state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 01kWSZ3pHM1mJTKIpKrl6BXQRJ4tnz
  2. kkWZXIasJ46ZWxR
Product

transistor memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. g0KNY4FF5HR4MqF34hJ01xgWwrFJWO
  2. 5sWhMpg4JhcEeVp
Product

transistor memory device

Size: not specified

Medium/Support: none

References

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