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p-doped MoS2 field-effect transistor

Based on

2 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-doped bilayer MoS2 nanosheets

n-doped BL MoS2 NS
Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density dependent on doping gas and light exposure time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
dielectric spectroscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • 2H-molybdenum disulfide
Product

p-doped MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. YkvBxBodDHVZQ78Is9DAA1J75tkNIPuxHNxwtHD4
Product

p-doped MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • Si/SiO2
Product

p-doped MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • Si/SiO2
Product

p-doped MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • Si/SiO2
Product

p-doped MoS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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