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N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly doped silicon

highly doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer

PDI8-CN2 monolayer
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. RpmBwYJ3uZ7XS4s7Swf3LSV8FFXGtERpBGfi5PQjbwUgMfn9L
  2. 3YAju2927BMq5l4gnXhaZxImbPWrxHTZmTeVAeAYt3VmXSHt3Y
  3. 72PFpvPa1AwOukmQ8feHudJjJCKjR
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. uyrhuhn0YbRj5tR2yokCzHsj3i5BIdvsuXH4GCatj00fYyPnB
  2. FzOIHxxZ0qNCWfHiIS3Ke7XGP6cRKD8TwtZEWDcQdoPZcUXQaj
  3. 2qTONLRl2kRuQtoYwbYvg5cvWavU
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. Gzn4nKJcNozPlQQdwEw2HAvrHX9T9IyO1q60PlQY94vUfFYv0
  2. AEw01doiWyiSo5BxEUXLRC5SWO2DOBOQUWfDSsRjXGkDfIxUy2
  3. 0vO90xYQLe9SlNkhFnKU9rrY3Vepf
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. KSb4rV9BOB4uKIKbejd1Vz3nR2r4bKgGKOoT5WMBkD0JUc9AO
  2. cRGllhkFc0H52b1oxAtmw6jA1NGWvrx5orAphGnYQEcpu4p14q
  3. xnFW4cwRtAXMIJgIqfJYCemkMI21
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. 1QgXtuXEzC9HoZ4mtNeSsqLciFeuCoi4sZ3aThHrqfIBqLY0L
  2. rGapPPKi1Kwmr4rovianNOLCEKOFzElFExBEoyxSmEjZkSmUoq
  3. L38dBOVYPRxHLp7GMghtsDMYjB1W
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Size: not specified

Medium/Support: none

References

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