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indium zinc oxide-based thin-film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium-doped zinc oxide

IZO
Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

silica-coated silicon

Si wafer
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on annealing temperature)

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. CJRbaSFPAq0jUg5Grnn0
Product

indium zinc oxide-based thin-film transistor

Size: not specified

Medium/Support: none

References

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