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scintillator-sensitized P3HT:PCBM photodetector

Based on

1 Articles
2015 Most recent source

Composition

1

a-Si:H

Type
Formula
Role
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent electrodes
3

poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4-(N-(4-sec-butylphenyl))diphenylamine)]

TFB
Type Polymer
Formula
Role hole extracting/electron blocking contact
4

poly(3-hexylthiophene)

P3HT
Type Polymer
Formula
Role hole extracting/electron blocking contact
5

poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester:terbium-doped gadolinium oxysulfide

P3HT:PCBM:GOS:Tb
Type Nano Material
Formula
Role X-ray absorbing layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
modulation transfer function (MTF)

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
ionizing radiation sensor for X-ray

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide coated hydrogenated amorphous silicon
  1. dDR8pJ8AzYvGy
Product

scintillator-sensitized P3HT:PCBM photodetector

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • indium tin oxide coated hydrogenated amorphous silicon
  1. vSnTePp1uadT1
Product

scintillator-sensitized P3HT:PCBM photodetector

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium tin oxide coated hydrogenated amorphous silicon
  1. w3rmS1dHBtOzL
Product

scintillator-sensitized P3HT:PCBM photodetector

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • indium tin oxide coated hydrogenated amorphous silicon
  1. UQoKYoxxgKRrh
Product

scintillator-sensitized P3HT:PCBM photodetector

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • indium tin oxide coated hydrogenated amorphous silicon
  1. 8g1VxJmKkIIh4
Product

scintillator-sensitized P3HT:PCBM photodetector

Size: not specified

Medium/Support: none

References

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