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organic field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n-type silicon

n-type Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

1,1,1,3,3,3-hexamethyldisilazane

bis(trimethylsilyl)amine hexamethyl disilazane trimethylsilyl moiety hexamethyldisilazane hexamethyldisilane HDMS HMDS
Type
Formula C6H19NSi2
Role
4

Cr/Au/TDT film

Type Nano Material
Formula
Role source
5

Cr/Au/TDT film

Type Nano Material
Formula
Role drain
6

s-indacenodiphenalene diphenyl derivative

Ph2-IDPL
Type
Formula C44H24
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on channel length

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • 1,1,1,3,3,3-hexamethyldisilazane
  1. 5OYTYc3NDdV4rP7OY5f
Product

organic field-effect transistor

Size: not specified

Medium/Support: none

References

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