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polymer-sorted semiconducting carbon nanotube-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

heavily doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Complex Compound
Formula
Role gate dielectrics
3

polymer-sorted semiconducting carbon nanotubes

single-walled carbon nanotubes polymer-sorted s-SWCNT s-SWCNT network s-SWCNT SWCNT
Type Nano Material
Formula
Role semiconductor layer
4

palladium

Type Single Compound
Formula Pd
Role source
5

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electrical conductivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
  1. mSEeYHFj2K1hvDQLZJKGU
  2. 5KNJyh85ZRstzG5AMUPtqvtjU0Ov9XDP7DyRfuDjnuxwUq7KK
  3. rzgMmg
Product

polymer-sorted semiconducting carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. qby6pFJkW4KoaqAWYD9Zt
  2. QNhxMxJ170eWRMMkvwiBTmoIAm5E1TZglazIuF4O7OGhgKFqM
  3. pPWLQu
Product

polymer-sorted semiconducting carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

References

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