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p-channel WSe2-based bottom-gate field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

platinum

Type Single Compound
Formula Pt
Role source
4

titanium

Type Single Compound
Formula Ti
Role source
5

WS2 nanoflakes

Type Nano Material
Formula
Role p-channel
6

Cytop

Type Polymer
Formula
Role buffer layer
7

titanium

Type Single Compound
Formula Ti
Role drain
8

gold

Type Single Compound
Formula Au
Role gate
9

platinum

Type Single Compound
Formula Pt
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on buffer layer passivation presence

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
Product

p-channel WSe2-based bottom-gate field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
Product

p-channel WSe2-based bottom-gate field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
Product

p-channel WSe2-based bottom-gate field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
Product

p-channel WSe2-based bottom-gate field-effect transistor

Size: not specified

Medium/Support: none

References

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