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CH3NH3PbI3-based phototransistor device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

methylammonium lead iodide nanosheets

CH3NH3PbI3 NS
Type
Formula
Role
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent dependent on irradiation power

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. vSjlu
  2. ld4XTeKv
Product

CH3NH3PbI3-based phototransistor device

Size: not specified

Medium/Support: none

References

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