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MoSe2 field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

degenerately doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

molybdenum(IV) selenide

molybdenum diselenide molybdenum selenide
Type Single Compound
Formula MoSe2
Role semiconductor layer
5

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
6

niobium-doped molybdenum disulfide

Nb-doped MoS2
Type
Formula Nb0.005Mo0.995S2
Role
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role source
9

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

MoSe2 field effect transistor

Size: not specified

Medium/Support: none

References

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