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Hall device

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

aluminium gallium nitride

aluminum gallium nitride AlGaN
Type
Formula
Role
4

gallium nitride

Type Single Compound
Formula GaN
Role capping layer
5

peptide/protein

Type
Formula
Role
6

cadmium selenide nanoparticles

CdSe nanoparticles CdSe NP
Type
Formula
Role
7

titanium/aluminum/nickel/gold

Ti/Al/Ni/Au
Type Complex Compound
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
circularly polarized light-induced Hall potential dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Product

Hall device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Product

Hall device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Product

Hall device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Product

Hall device

Size: not specified

Medium/Support: none

References

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