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NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

WSe2 film

Type Nano Material
Formula
Role semiconductor layer
4

Nb-doped WSe2 film

WxNb1-xSe2 film
Type Nano Material
Formula
Role transition layer
5

NbSe2 film

Type Nano Material
Formula
Role drain
6

NbSe2 film

Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. fToH9Y2qvc39aXArGXTOizbhR2UITNf
  2. kktalUuqLkO3D8YABS4zHyBFn
Product

NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. Fabfb2xceazbrVaszA1HAbPRM1atqb9
  2. WzA3a3U51JafcwjBZMG4xDrql
Product

NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. oaUi75wysgPE0mfjX35zBWnnNteaDYF
  2. vQDhMa3FjPhoItRLI71lUJriG
Product

NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. Q7EhEZOPBL96qcCZeTYNOpIHFxCqN2Z
  2. wvaOlxFgRDOaJSz36JZUrFDl9
Product

NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. Ro7zS1pyqz6xhkGwqGUlEktgdjP71qn
  2. S4QmpUG9Qxi2KCf5iggjcCQsK
Product

NbSe2-WxNb1-xSe2-WSe2 junction field effect transistor

Size: not specified

Medium/Support: none

References

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