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nanodevice based on (boron-doped germanium/silicon-coated germanium nanowire/boron-doped germanium/silicon-coated germanium nanowire/silica on n-doped silicon/silica on n-doped silicon/tantalum(III) nitride/tantalum(III) nitride/aluminium oxide/aluminium oxide/nickel/nickel/nickel/nickel)

Based on

1 Articles
2014 Most recent source

Composition

1

silica on n-doped silicon

Type Complex Compound
Formula
Role backgate
2

boron-doped germanium/silicon-coated germanium nanowire

Type
Formula
Role
3

nickel

Type Single Compound
Formula Ni
Role drain
4

nickel

Type Single Compound
Formula Ni
Role source
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula TaN
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
  1. ybUE5CE
Product

nanodevice based on (boron-doped germanium/silicon-coated germanium nanowire/boron-doped germanium/silicon-coated germanium nanowire/silica on n-doped silicon/silica on n-doped silicon/tantalum(III) nitride/tantalum(III) nitride/aluminium oxide/aluminium oxide/nickel/nickel/nickel/nickel)

Size: not specified

Medium/Support: none

References

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