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atomically thin and layered semiconducting-channel tunnel-field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped germanium

Type
Formula
Role
2

substoichiometric germanium oxide

germanium partially oxidized germanium suboxide germanium oxide GeOx (x < 2) Ge oxide
Type Single Compound
Formula GeOx
Role dielectric layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

molybdenum disulfide thin film

MoS2 film
Type Nano Material
Formula
Role semiconductor layer
5

yttrium-gold layer

Y/Au film
Type Nano Material
Formula
Role source
6

yttrium-gold layer

Y/Au film
Type Nano Material
Formula
Role drain
7

yttrium-gold layer

Y/Au film
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • germanium wafer
Product

atomically thin and layered semiconducting-channel tunnel-field-effect transistor

Size: not specified

Medium/Support: none

References

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