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rubrene/graphene-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role dielectric layer
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role electrodes
5

5,6,11,12-tetraphenylnaphthacene

5,6,11,12-tetraphenyltetracene ruberene rubrene RUB RU
Type Single Compound
Formula C42H28
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
  • hexagonal boron nitride
Product

rubrene/graphene-based field-effect transistor

Size: not specified

Medium/Support: none

References

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