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poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)-based top-gate/bottom-contact organic thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

Cytop

Type Polymer
Formula
Role gate dielectrics
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)

PDBPyBT
Type Polymer
Formula
Role semiconductor layer
7

aluminium

aluminum
Type Single Compound
Formula Al
Role gate electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current dependent on drain-source voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)-based top-gate/bottom-contact organic thin film transistor

Size: not specified

Medium/Support: none

References

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