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NH2-dendrimer/OA-BTO NP multilayer based resistive switching memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silica film on silicon

Si/SiO2 film
Type Nano Material
Formula
Role substrate
2

titanium

Type
Formula Ti
Role
3

platinum

Type Single Compound
Formula Pt
Role electrodes
4

amine-functionalized dendrimer/oleic acid stabilized barium titanate nanoparticles multilayer

NH2-dendrimer/OA-stabilized BTO NP multilayer
Type
Formula
Role
5

silver

Type Single Compound
Formula Ag
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

NH2-dendrimer/OA-BTO NP multilayer based resistive switching memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

NH2-dendrimer/OA-BTO NP multilayer based resistive switching memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

NH2-dendrimer/OA-BTO NP multilayer based resistive switching memory device

Size: not specified

Medium/Support: none

References

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