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back-gated graphene oxide-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolithic graphene oxide sheets

monolithic GO sheets
Type Nano Material
Formula
Role conducting layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical conductivity dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gated graphene oxide-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

back-gated graphene oxide-based field-effect transistor

Size: not specified

Medium/Support: none

References

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