Loading ...

BP-ZnO nanowire hetrojunction bottom gate field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
2

ZnO nanowire

ZnO NW
Type Nano Material
Formula
Role semiconductor layer
3

black phosphorus nanosheet

BP NS
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role electrodes
5

gold

Type Single Compound
Formula Au
Role electrodes
6

p-Si

Type Complex Compound
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
optoelectronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
optical microscopy

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. pGtmViPO7xJCsHTAcJo8IZNb3TsG
Product

BP-ZnO nanowire hetrojunction bottom gate field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. wnWTbF5Nxb1IXUWRJm6uyZmj2U8S
Product

BP-ZnO nanowire hetrojunction bottom gate field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial