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back-gated WS2-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Ti/Au film

Type Nano Material
Formula
Role source
4

Ti/Au film

Type Nano Material
Formula
Role drain
5

WS2 film

Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tungsten(V) chloride
  • doped Si/SiO2
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Product

back-gated WS2-based field-effect transistor

Size: not specified

Medium/Support: none

References

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