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IGZO thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

ITZO film

Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate hydrate
  • zinc acetate dihydrate
  • indium(III) nitrate hydrate
  1. Of52SFJfNHatZtfM
  2. AzorCmOIEwb9iCMa
  3. 2JkOb1DApTN
  4. QrMQ
  5. kKWNfJCb
  6. ckL
Product

IGZO thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • stannous chloride
  • zinc acetate dihydrate
  • indium(III) nitrate hydrate
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  2. etWoMy6Mqd6ezldA
  3. lmge287Gy5O
  4. UAa1
  5. KouvxDn2
  6. aH4
Product

IGZO thin film transistor

Size: not specified

Medium/Support: none

References

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