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dual-gated graphene field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-type Si

Type Complex Compound
Formula
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene

Type Nano Material
Formula
Role channels
4

titanyl phthalocyanine

titanylphthalocyanine TiOPc
Type
Formula C32H16N8OTi
Role
5

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role dielectric layer
6

nickel

Type Single Compound
Formula Ni
Role source
7

nickel

Type Single Compound
Formula Ni
Role drain
8

nickel

Type Single Compound
Formula Ni
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel resistance dependent on top gate bias

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si/SiO2
  • graphite
  1. HRUAmjKcesK
Product

dual-gated graphene field-effect transistor

Size: not specified

Medium/Support: none

References

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