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semi-aligned PF12-SWNT network field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

highly doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

random PF12-SWNT network

Type Nano Material
Formula
Role active layer
4

bilayer of ITO and Au

Type Nano Material
Formula
Role source
5

bilayer of ITO and Au

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. nVCnMmDR14ZOnmKIBvgsDaILBQh
  2. sGvCmanBY3ougc
  3. Ketaoxg
Product

semi-aligned PF12-SWNT network field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. QRYFmR7
Product

semi-aligned PF12-SWNT network field-effect transistor

Size: not specified

Medium/Support: none

References

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