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molybdenum ditelluride-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum ditelluride flakes

MoTe2 flakes
Type Nano Material
Formula
Role semiconductor layer
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
  • Si wafer
Product

molybdenum ditelluride-based field-effect transistor

Size: not specified

Medium/Support: none

References

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