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MoS2 transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
3

few-layer molybdenum(IV) sulfide monolayer

quadruple-layer molybdenum disulfide film multilayered molybdenum disulfide few-layer molybdenum(IV) sulfide few-layer molybdenum disulfide molybdenum disulfide flakes four-layer MoS2 nanosheets few-layer MoS2 nanosheets few-layered MoS2 crystals molybdenum sulfide flakes quadruple-layer MoS2 film layered MoS2 2D material few-layer MoS2 monolayer few-layer MoS2 crystals four-layer MoS2 flakes few-layer MoS2 flakes two-dimensional MoS2 few-layers of MoS2 3L MoS2 nanoflakes multilayered MoS2 4-monolayer MoS2 MoS2 nanosheets multilayer MoS2 four-layer MoS2 few-layer MoS2 MoS2 crystals MoS2 flakes
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • tetrakis(dimethylamido)-hafnium(IV)
Product

MoS2 transistor

Size: not specified

Medium/Support: none

References

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