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back-gated field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

trilayer MoS2 nanoflakes

three layer MoS2 multilayer MoS2 2D MoS2
Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

tris (4-bromophenyl) ammoniumyl hexachloroantimonate

tris(4-bromophenyl)ammoniumyl hexachloroantimonate tris(p-bromophenyl)aminium hexachloroantimonate Magic Blue magic blue TPASbCl6
Type
Formula C18H12Br3Cl6NSb
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
air stability

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gated field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

back-gated field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

back-gated field-effect transistor

Size: not specified

Medium/Support: none

References

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