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indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium-gallium-zinc oxide/tin oxide nanowires nanostructure

a-IGZO/(random-SnO2-NW) nanostructure
Type Nano Material
Formula
Role channels
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. o7DVYrGg1DgRsj5XMq2flj4JhjjHF
  2. fYV
  3. G7B4gMrUIwkkXzQlW
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. tVuRDSnIDB16yF0Tk7GDL0LMtBonZ
  2. wC2
  3. FEQTKNTaI8eFrMDxG
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. 56uO9nVCz47DQROTsMag5NKrXTRcV
  2. 7kI
  3. 7VVF0kJgaZohOilwB
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. wOBTycVipwlOszg34rBSRg5SjXSmV
  2. b8H
  3. qFEFnLJPE2rg0hStt
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. A0Bo5bAd5rbGrUP7Opbxdl9dIJtkW
  2. lVo
  3. HiXKuHmGHGkHByOWH
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

References

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