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organic-transistor-based memory device

Based on

1 Articles
2015 Most recent source

Composition

1

n-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

PVP-coated gold nanoparticle-incorporated pentacene

Au@PVP-incorporated pentacene
Type
Formula
Role
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • heavily doped n-type silicon substrate
  • poly(vinylpyrrolidone)-protected gold nanoparticles
  1. nNEYfpP
  2. KbpX8m7sQn5OnN4
Product

organic-transistor-based memory device

Size: not specified

Medium/Support: none

References

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