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GaN-based metal-oxide-semiconductor capacitor

Based on

2 Articles
2012 Most recent source

Composition

1

sapphire

Type
Formula Al2O3
Role
2

silicon-doped gallium nitride

Type
Formula
Role
3

titanium layer

Ti layer
Type
Formula
Role
4

100 nm-thick aluminium layer

100 nm-thick aluminium layer 100-nm thick aluminium layer 100 nm thick alumnium layer Al gate electrode aluminium layer aluminium film aluminium slab aluminum film cathode layer Al electrode Al thin film Al layer Al films Al film Al slab
Type
Formula
Role
5

nickel layer

Type
Formula
Role
6

palladium layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
barrier height

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • α-aluminium(III) oxide
  • n-type gallium nitride
Product

GaN-based metal-oxide-semiconductor capacitor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon-doped gallium nitride
  • sapphire
Product

GaN-based metal-oxide-semiconductor capacitor

Size: not specified

Medium/Support: none

References

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