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pentacene field-effect transistor with deposited Cu film source/drain electrodes

Based on

1 Articles
2014 Most recent source

Composition

1

highly doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

copper

Type Single Compound
Formula Cu
Role source
4

copper

Type Single Compound
Formula Cu
Role drain
5

pentacene

PEN Pen P5 Pc Pe
Type Single Compound
Formula C22H14
Role active layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band structure plot

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • copper
  1. v2H3WI44ofS
Product

pentacene field-effect transistor with deposited Cu film source/drain electrodes

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • copper
  1. sY22oS8WpbE
Product

pentacene field-effect transistor with deposited Cu film source/drain electrodes

Size: not specified

Medium/Support: none

References

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